? semiconductor components industries, llc, 2010 october, 2010 -- rev. 7 1 publication order number: msd1819a--rt1/d msd1819a--rt1 general purpose amplifier transistor npn silicon surface mount this npn silicon epitaxial planar transistor is designed for general purpose amplifier applications. this device is housed in the sc-70/sot-323 package which is designed for low power surface mount applications. features ? high h fe , 210 -- 460 ? low v ce(sat) ,<0.5v ? moisture sensitivity level 1 ? esd protection: human body model > 4000 v machine model > 400 v ? these devices are pb--free, halogen free/bfr free and are rohs compliant maximum ratings (t a =25 ? c) rating symbol value unit collector-base voltage v (br)cbo 60 vdc collector-emitter voltage v (br)ceo 50 vdc emitter-base voltage v (br)ebo 7.0 vdc collector current -- continuous i c 100 madc collector current -- peak i c(p) 200 madc thermal characteristics characteristic symbol max unit power dissipation (note 1) p d 150 mw junction temperature t j 150 ? c storage temperature range t stg --55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. ex tended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a fr-4 glass epox y printed circuit board using the minimum recommended footprint. collector 3 1 base 2 emitter http://onsemi.com ?for information on tape and reel specifications, including part orientatio n and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. sc--70 (sot--323) case 419 style 3 marking diagram 3 1 2 device package shipping ? ordering information zr = device code m = date code* g = pb--free package msd1819a--rt1g sc--70/ sot--323 (pb--free) 3000/tape & reel zr m g g 1 (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location.
msd1819a--rt1 http://onsemi.com 2 electrical characteristics characteristic symbol min max unit collector-emitter breakdown voltage (i c =2.0madc,i b =0) v (br)ceo 50 -- vdc collector-base breakdown voltage (i c =10 m adc, i e =0) v (br)cbo 60 -- vdc emitter-base breakdown voltage (i e =10 m adc, i e =0) v (br)ebo 7.0 -- vdc collector-base cutoff current (v cb =20vdc,i e =0) i cbo -- 0.1 m a collector-emitter cutoff current (v ce =10vdc,i b =0) i ceo -- 0.1 m a dc current gain (note 2) (v ce =10vdc,i c =2.0madc) (v ce =2.0vdc,i c = 100 madc) h fe1 h fe2 210 90 340 -- -- collector-emitter saturation voltage (note 2) (i c = 100 madc, i b =10madc) v ce(sat) -- 0.5 vdc 2. pulse test: pulse width ? 300 m s, d.c. ? 2%. figure 1. derating curve figure 2. collector emitter saturation voltage vs. collector current t a , ambient temperature ( ? c) i c , collector current (a) 150 100 50 0 -- 5 0 0 50 100 150 200 250 1 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0 50 100 200 250 300 350 450 1 0.1 0.01 0.001 0.0001 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 p d , power dissipation (mw) v ce(sat) , collector--emitter saturation voltage (v) h fe , dc current gain v be(sat) , base--emitter satura- tion voltage (v) r ja = 833 ? c/w i c /i b =10 25 ? c 150 ? c -- 5 5 ? c 150 400 150 ? c(10v) 150 ? c(2v) -- 5 5 ? c(10v) -- 5 5 ? c(2v) 25 ? c(10v) 25 ? c(2v) i c /i b =10 25 ? c 150 ? c -- 5 5 ? c
msd1819a--rt1 http://onsemi.com 3 figure 5. base emitter turn--on voltage vs. collector current figure 6. collector saturation region i c , collector current (a) i b , base current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.5 0.6 0.8 0.9 1.0 0.01 0.001 0.0001 0.00001 0.000001 0 0.2 0.4 0.6 0.8 1.0 1.2 figure 7. input capacitance v eb , emitter base voltage (v) 6 5 4 3 2 1 0 7 8 10 11 13 15 16 18 v be(on) , base--emitter turn on voltage (v) v ce , collector--emitter voltage (v) c ibo , input capacitance (pf) figure 8. output capacitance v cb , collector base voltage (v) 40 30 25 20 15 10 5 0 1.0 1.5 2.0 3.0 4.0 4.5 5.5 6.0 c obo , output capacitance (pf) 25 ? c 150 ? c -- 5 5 ? c 0.7 t a =25 ? c i c = 100 ma 50 ma 10 ma 1ma 9 12 14 17 c ibo (pf) 2.5 3.5 5.0 35 c obo (pf) 500 m a
msd1819a--rt1 http://onsemi.com 4 package dimensions sc--70 (sot--323) case 419--04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 ? mm inches ? scale 10:1 *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s techni cal experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or fo r any other application in which the failure of the scillc product could create a situation wher e personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unaut horized application, buyer shall indemnify and hold scillc and its offic ers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or in directly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such clai m alleges that scillc was negligent regarding the design or manufactur e of the part. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable c opyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 msd1819a--rt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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